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GFP70N03
N-Channel Enhancement-Mode MOSFET
TO-220AB
0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56)
D
NCHT RE FE T EN G
VDS 30V RDS(ON) 8m ID 70A
D
(R)
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14)
G
S
*
0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39)
Features
* Advanced Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency
0.410 (10.41) 0.350 (8.89)
G PIN D S
0.160 (4.06) 0.09 (2.28)
0.560 (14.22) 0.530 (13.46)
Mechanical Data
Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds, 0.17" (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g
0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83)
0.022 (0.56) 0.014 (0.36)
Dimensions in inches and (millimeters)
* May be notched or flat
Maximum Ratings and Thermal Characteristics (TC = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25C TC = 100C Symbol VDS VGS ID IDM PD TJ, Tstg TL RJC RJA Limit 30 20 70 200 62.5 25 -55 to 150 275 2.0 62.5 Unit V
A W C C C/W C/W
Operating Junction and Storage Temperature Range Lead Temperature (1/8" from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Notes: (1) Maximum DC current limited by the package
5/16/01
GFP70N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
(2)
Symbol
Test Condition
Min
Typ
Max
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 30V, VGS = 0V VDS 5V, VGS = 10V VGS = 10V, ID = 35A VGS = 4.5V, ID = 30A VDS = 15V, ID = 35A
30 1.0 -- -- 70 -- -- --
-- -- -- -- -- 6 9 61
-- 3.0 100 1 -- 8 11 --
V V nA A A m S
Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max Diode Forward Current Diode Forward Voltage
(2)
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS =15V, VGS=5V, ID=35A VDS = 15V, VGS = 10V ID = 35A
-- -- -- -- --
34 63 11 11 9 9 100 31 3400 618 300
48 95 -- -- 14 14 167 62 -- -- -- pF ns nC
VDD = 15V, RL = 15 ID 1A, VGEN = 10V RG = 6 VGS = 0V VDS = 15V f = 1.0MHZ
-- -- -- -- -- --
IS VSD
-- IS = 35A, VGS = 0V
-- --
-- 0.9
35 1.3
A V
Notes: (1) Maximum DC current limited by the package (2) Pulse test; pulse width 300 s, duty cycle 2% VDD
ton
toff tr
90%
Switching Test Circuit
VGEN RG
VIN
D
RD VOUT
Switching Waveforms
td(on)
td(off)
tf 90 %
10% INVERTED 90%
Output, VOUT
DUT
10%
G
50% 50%
S
Input, VIN
10% PULSE WIDTH
GFP70N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Output Characteristics
70 60 50 40 30 20 10 VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 3.0V 10V 6.0V 4.5V 60 4.0V 3.5V 70 VDS = 10V
Fig. 2 - Transfer Characteristics
ID -- Drain Source Current (A)
ID -- Drain Current (A)
50 40 TJ = 125C 30 --55C 20 25C 10
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 - Threshold Voltage vs. Temperature
1.8 ID = 250A 0.014 0.012
Fig. 4 - On-Resistance vs. Drain Current
VGS(th) -- Threshold Voltage (V)
RDS(ON) -- On-Resistance ()
1.6 1.4 1.2
0.01 VGS = 4.5V 0.008 0.006 VGS = 10V 0.004 0.002 0
1
0.8 0.6 --50
--25
0
25
50
75
100
125
150
0
20
40
60
80
100
TJ -- Junction Temperature (C)
ID -- Drain Current (A)
Fig. 5 - On-Resistance vs. Junction Temperature
1.6 VGS = 10V ID = 35A
RDS(ON) -- On-Resistance (Normalized)
1.4
1.2
1
0.8
0.6 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (C)
GFP70N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 6 - On-Resistance vs. Gate-to-Source Voltage
0.03 ID = 35A 10
Fig. 7 - Gate Charge
VGS -- Gate-to-Source Voltage (V)
VDS = 15V ID = 35A 8
RDS(ON) -- On-Resistance ()
0.025 0.02
6
0.015 TJ = 125C
4
0.01 0.005
25C
2
0 2 4 6 8 10
0 0 10 20 30 40 50 60 70
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 8 - Capacitance
4500 4000 3500 Ciss f = 1MHZ VGS = 0V 100
Fig. 9 - Source-Drain Diode Forward Voltage
VGS = 0V 10
3000 2500 2000 1500 1000 500 0 0 5 Crss Coss
IS -- Source Current (A)
C -- Capacitance (pF)
1
TJ = 125C
0.1
25C
--55C
0.01 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
GFP70N03
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 10 - Breakdown Voltage vs. Junction Temperature
40
1
Fig. 11 - Thermal Impedance
D = 0.5
39
RJA (norm) -- Normalized Thermal Impedance
BVDSS -- Breakdown Voltage (V)
ID = 250A
0.2 PDM 0.1 0.1 0.05 Single Pulse t1 t2 1. Duty Cycle, D = t1/t2 2. RJC (t) = RJC(norm) *RJC 3. RJC = 2.0C/W 4. TJ - TC = PDM * RJC (t) 0.01 0.0001 0.001 0.01 0.1 1 10
38
37
36
35 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (C)
Pulse Duration (sec.)
Fig. 12 - Power vs. Pulse Duration
1000 Single Pulse RJC = 2.0C/W TC = 25C 1000
Fig. 13 - Maximum Safe Operating Area
800
ID -- Drain Current (A)
10
100
S RD (O N)
Power (W)
600
Lim
it
1m
10 m s
0 s
s
400
10 VGS = 10V Single Pulse RJC = 2.0 C/W TC = 25C 0.1 1
100ms DC
200
0 0.0001 0.001 0.01 0.1 1 10
1
10
100
Pulse Duration (sec.)
VDS -- Drain-Source Voltage (V)

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